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3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series
Features
* * * * * Low Voltage Operation (3 - 5V) High fT (11 GHz) Low Noise Figure with 1-5 mA Current Inexpensive Available on Tape and Reel
SOT-23
Description
The MP4T6325 series of low voltage silicon bipolar transistors provide low noise figure at a bias of 3-5 volts and collector current of 1 to 5 mA. These inexpensive surface mount transistors are useful for low noise amplifiers and VCOs in portable battery operated RF systems from VHF through 2.5 GHz. The MP4T6325 series has high fT (11 GHz) and provides 1.5 dB noise figure with 1-5 mA current and 3 volts bias at 1 GHz. These transistors also have low phase noise when used in 3-5 volt low power battery operated VCOs through 2.5 GHz. The MP4T6325 series are inexpensive transistors useful for portable battery operated RF systems that require low current drain from 3-5 volts DC supplies. The MP4T6325 family of transistors is available in chip (MP4T632500), SOT-23 (MP4T632533), SOT-143 (MP4T632539) and in Micro-X (MP4T632535) packages. Surface mount packages are available on tape and reel.
SOT-143
Chip
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor
MP4T6325 Series
Electrical Specifications at 25C
Symbol fT |S21E|
2
Parameters Gain Bandwidth Product Insertion Power Gain Noise Figure Unilateral Gain
NF GTU (max)
MAG P1dB RTH (J-A) RTH (J-C)
1.
Maximum Available Gain Power Out at 1dB Compression Thermal Resistance Thermal Resistance
Test Conditions VCE = 3V IC = 10 mA VCE = 3V IC = 10 mA f = 1 GHz f = 2 GHz VCE = 3V IC = 2 mA f = 1 GHz VCE = 3V IC = 10 mA f = 1 GHz f = 2 GHz VCE = 3V IC = 10 mA f = 2 GHz VCE = 3V IC = 15 mA f = 900MHz Junction/ Ambient Junction/ Case
Units GHz dB
MP4T632500 Chip 11 typ.
MP4T632533 SOT-23 10 typ.
MP4T632535 Micro-X 11 typ.
MP4T632539 SOT-143 11 typ.
12 typ. 8 typ. dB 1.5 typ. dB 14.5 typ. 9 typ. dB 10 typ. dBm C/W C/W 8 typ. 70 max.
1
11 typ. 7 typ. 1.6 typ. 13 typ. 8 typ. 9 typ. 8 typ. 650 typ. 200 typ.
12 typ. 8 typ. 1.5 typ. 14.5 typ. 9 typ. 10 typ. 8 typ. 500 typ. 200 typ.
11 typ. 7 typ. 1.6 typ. 13 typ. 8 typ. 9 typ. 8 typ. 625 typ. 200 typ.
Junction/Heat Sink R TH (J-C)
Maximum Ratings at 25C
Parameter Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Chips or Ceramic Packages Plastic Packages Power Dissiapation
1. See Typical Performance Curves for power derating.
Symbol VCBO VCEO VEBO IC Tj TSTG PD
Maximum Rating 8V 6V 1.5 V 25 mA 200C -65C to +200C -65C to +125C 150mW1
Electrical Specifications at 25C
Parameters Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector Base Junction Capacitance Conditions VCB = 5 V IE = 0 VEB = 1 V IC = 0 VCE = 3 V IC = 3 mA VCB = 3 V IE = 0 f = 1 MHz Symbol ICBO IEBO hFE COB Min. 20 Typ. 90 0.52 Max. 100 1 200 0.70 Units nA A pF
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T632535 Typical Scattering Parameters in the MIcro-X Package VCE = 3 Volts, IC = 5 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.486 0.338 0.294 0.284 0.283 0.281 0.290 0.320 0.333 0.358 0.382 0.405 Angle -80.5 -128.0 -156.3 169.8 160.9 144.6 132.5 119.4 106.6 94.9 82.7 72.7 Mag. 7.164 4.508 3.219 2.533 2.123 1.835 1.678 1.546 1.434 1.354 1.290 1.238 S21E Angle 119.8 93.4 78.1 66.1 55.5 46.3 36.8 28.3 18.9 11.5 4.0 -4.0 Mag. 0.077 0.112 0.144 0.179 0.210 0.240 0.272 0.301 0.323 0.349 0.375 0.397 S12E Angle 56.6 51.9 50.2 47.8 44.7 41.8 36.7 33.2 29.0 25.1 21.4 17.7
MP4T6325 Series
S22E Mag 0.628 0.424 0.345 0.305 0.280 0.266 0.256 0.254 0.245 0.241 0.246 0.255 Angle -45.8 -58.8 -65.9 -74.9 -83.1 -90.8 -103.7 -113.8 -125.4 -135.9 -146.1 -158.0
VCE = 3 Volts, IC = 10 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.326 0.288 0.288 0.305 0.319 0.330 0.335 0.372 0.385 0.417 0.445 0.468 Angle -116.9 -158.6 174.6 160.8 145.8 131.0 121.4 110.2 99.4 88.6 77.1 67.4 Mag. 8.628 4.808 3.337 2.608 2.172 1.863 1.696 1.559 1.444 1.361 1.294 1.236 S21E Angle 108.6 86.7 73.4 62.3 52.2 43.2 34.5 25.9 16.9 9.4 3.2 -6.0 Mag. 0.060 0.098 0.135 0.170 0.204 0.234 0.268 0.299 0.322 0.350 0.379 0.401 S12E Angle 60.9 60.0 57.7 53.7 49.7 45.8 41.0 36.8 32.7 28.3 24.1 20.3 S22E Mag 0.505 0.351 0.302 0.275 0.256 0.245 0.245 0.245 0.240 0.237 0.242 0.253 Angle -48.5 -56.2 -61.8 -71.7 -80.2 -88.1 -101.8 -112.9 -125.3 -136.8 -148.0 -160.2
VCE = 3 Volts, IC = 15 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.286 0.278 0.287 0.317 0.334 0.354 0.355 0.382 0.408 0.440 0.471 0.492 Angle -136.7 -173.6 168.5 149.8 135.8 121.6 112.4 100.2 92.3 82.1 71.3 62.2 Mag. 9.912 5.355 3.679 2.875 2.377 2.029 1.834 1.653 1.552 1.456 1.377 1.312 S21E Angle 104.1 84.5 72.6 61.7 52.0 43.0 34.6 26.7 17.3 10.0 2.2 -5.5 Mag. 0.053 0.092 0.132 0.165 0.200 0.230 0.265 0.290 0.317 0.344 0.372 0.392 S12E Angle 65.0 64.6 60.8 56.6 52.2 47.7 42.7 38.9 34.1 29.7 25.2 21.3 S22E Mag 0.428 0.295 0.263 0.236 0.222 0.215 0.218 0.220 0.218 0.213 0.212 0.218 Angle -50.5 -55.5 -60.3 -70.3 -77.5 -84.3 -97.2 -103.8 -117.6 -127.1 -137.0 -147.9
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor Typical Performance Curves (MP4T632535)
POWER DERATING CURVES
160 POWER DISSIPATION (mW)
MP4T6325 Series
NOISE FIGURE and ASSOCIATED GAIN at VCE = 3 V, 1 GHz vs COLLECTOR CURRENT
10 9 8 7 6 5 4 3 2 1 0 1 NF
(O P T)
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 A M B I E N T T E M P E R A T U R E (C ) M P4T632533, 39 (S O T -2 3 , 1 4 3 ) F R E E A I R M P 4 T 6 3 2 5 3 5 (M IC R O -X ) M P4T 63250 0 (C H IP ) O N I N F IN I T E H E A T S I N K
ASSOCIATED GAIN (dB)
140
NOISE FIGURE (dB)
AS SO C I AT E D G AI N
N O IS E F IG U R E (50 O hm s )
10 C O L L E C T O R C U R R E N T (m A)
10 0
GAIN vs FREQUENCY at VCE=3 V and IC = 10 mA
16
COLL.-BASE CAPACITANCE (pF)
COLLECTOR-BASE CAPACITANCE (COB) vs COLLECTOR-BASE VOLTAGE
0.65 0 .6 0.55 0 .5 0.45 0 .4 1 C O L L E C T O R -B ASE VO L T AG E (Vo lts) 10
14 12 GAIN (dB) 10 8 6 4 2 0 1 F R E Q U E N C Y (G H z) 10 |S 2 1E |2 G T U (M AX )
GAIN BANDWIDTH PRODUCT (fT ) vs COLLECTOR CURRENT at VCE=3 V
12 GAIN BANDWIDTH (GHz) 10 8 6 4 2 2 0 1 10 C O L L E C T O R C U R RE N T (m A) 100 0 1 GAIN (dB) 12 10 8 6 4
GAIN vs COLLECTOR CURRENT at 2 GHz, VCE=3 V
M AG G T U (M AX ) |S 2 1 E |2
10 C O L L E C T O R C U R R E N T (m A)
10 0
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor Typical Performance Curves (MP4T632535) Cont.
DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 3 V
1 00 90 DC CURRENT GAIN 80 70 60 50 40 0 5 10 15 20 25 C O L L E C T O R C U R R E N T (m A )
MP4T6325 Series
OUTPUT POWER at 1 dB COMPRESSION POINT vs COLLECTOR CURRENT VCE=3V
12 10 f = 90 0 M H z POUT - 1dB (dBm) 8 6 f = 2 GH z 4 2 0 5 10 15 20 25 30 C O L L E C T O R C U R R E N T (m A)
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor Case Styles
Chip - MP4T632500 MP4T632500
DIM. A B C D
MP4T6325 Series
BASE
INCHES (Nominal) 0.013 0.013 0.0016 0.0045
MM (Nominal) 0.35 0.35 0.040 0.11
B
D THICKNESS
EMITTER
A
C 2 PLCS.
SOT-23 - MP4T632533 MP4T632533
F D C olle c tor M G B K A N
L H B a se J E m itte r C E
DIM. A B C D E F G H J K L DIM. M N
INCHES MIN. MAX. 0.048 0.008 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 GRADIENT 10 max. 1 2 . . . 30
MILLIMETERS MIN. MAX. 1.22 0.20 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60
NOTE: 1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 6
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor Case Styles (Con't)
Micro-X - MP4T632535
Emitter F 4 PLCS. E H
MP4T6325 Series
MP4T632535
DIM. A B C D E F G H INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45 MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.046 0.56 3.81 0.08 0.15 45
Collector B
Base
Emitter
A
C
G
D
SOT-143 - MP4T632539
MP4T632539
DIM. A B C D E F G H J K L M DIM. N P INCHES MIN. MAX. 0.044 0.044 0.040 0.030 0.035 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.075 typical 0.103 0.024 GRADIENT 10 max. 1 2 . . . 30 MILLIMETERS MIN. MAX. 1.10 1.10 1.00 0.75 0.90 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.90 typical 2.6 0.6
E m itte r G J
B a se
A
P
N H
B L
M E K C olle c tor E m itte r D C F
NOTE: 1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 7
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor
MP4T6325 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 8
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440

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